http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015146394-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate | 2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9223c11ea10a19122203db594eaa5334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0af87f7f14f76735a6cd8f4c4a79a267 |
| publicationDate | 2015-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015146394-A |
| titleOfInvention | Method for forming mask and method for forming impurity diffusion layer |
| abstract | Forming a mask capable of forming a mask capable of satisfactorily protecting the diffusion of an impurity diffusion component at a location where the diffusion of the impurity diffusion component on the semiconductor substrate is not desired when the impurity diffusion component is diffused in a semiconductor substrate A method and a method for forming an impurity diffusion layer on a semiconductor substrate including a mask formed by the method are provided. A coating film formed by regioselectively applying a mask forming composition containing a siloxane resin on a semiconductor substrate is baked to obtain a cured film, and then an inert gas is applied to the formed cured film. A mask is formed by irradiating the plasma. [Selection figure] None |
| priorityDate | 2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 174.