| abstract |
To provide a transparent conductor having a low surface resistance value and a high total light transmittance at a wavelength of 555 nm, and having excellent etching characteristics and storage reliability. A transparent substrate, a first metal oxide layer, a metal layer, and a second metal oxide layer are laminated in this order, and at least one of the first and second metal oxide layers is formed. , Al 2 O 3 , ZnO, SnO 2 , and Ga 2 O 3 , and the molar ratio of the sum of Al 2 O 3 and ZnO, SnO 2 , and Ga 2 O 3 to the total of the four components Are X, Y, and Z, respectively, the points a (71.2, 3.8, 25.0), b (in the (X, Y, Z) coordinates shown in the triangular diagram of FIG. 85.5,4.5,10.0), point c (76.0,19.0,5.0), point d (66.5,28.5,5.0), point e (59.5,25.5,15.0), and line connecting point f (67.5,7.5,25.0) Provided is a transparent conductor which is in a region surrounded by a minute or on a line segment and whose molar ratio of Al 2 O 3 to four components is 1.5 to 3.5 mol%. [Selection] Figure 2 |