http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015133516-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
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filingDate 2015-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8698b24cee032e30e3b0df19c5eaa79
publicationDate 2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015133516-A
titleOfInvention Semiconductor device and manufacturing method of semiconductor device
abstract An object of the present invention is to achieve both suppression of an increase in contact resistance and improvement of a breakdown voltage in the vicinity of an end of a groove. A trench part GT is provided between a source offset region and a drain offset region in at least a plan view of a semiconductor layer, and is provided in a source / drain direction from the source offset region to the drain offset region in a plan view. The gate insulating film GI covers the side surface and the bottom surface of the trench part GT. The gate electrode GE is provided in the trench part GT at least in plan view, and is in contact with the gate insulating film GI. The contact GC is in contact with the gate electrode GE. Further, the contact GC is disposed so as to be shifted in the first direction perpendicular to the source / drain direction with respect to the center line in the trench part GT extending in the source / drain direction in plan view, and provided in the trench part GT in plan view. ing. [Selection] Figure 4
priorityDate 2015-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06216383-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012004541-A
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Total number of triples: 22.