| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3221 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2014-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8ac77de5555d754234572e634d869d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43eb335a8059480bc868c5c580d8f781
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f549581f1ee2ff4ee5b2683f9f3204 |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015130396-A |
| titleOfInvention |
Epitaxial wafer manufacturing method and epitaxial wafer |
| abstract |
A method of manufacturing an epitaxial wafer having excellent gettering capability while suppressing formation of epitaxial defects is provided. A dose of 2.0 × 10 14 / cm 2 or more and 1.0 × 10 16 / cm 2 or less on the surface of a silicon wafer 10 having a resistivity of 0.001 Ω · cm or more and 0.1 Ω · cm or less. A cluster ion irradiation step of irradiating the surface of the silicon wafer 10 with the cluster ions 16 containing at least carbon to form a modified layer 18 in which the constituent elements of the cluster ions 16 are dissolved; And an epitaxial layer forming step of forming an epitaxial layer 20 having a higher resistivity than the silicon wafer 10 on the modified layer 18. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017157613-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935235-B2 |
| priorityDate |
2014-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |