http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015122482-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7fbcdb105756f552ddf2e9ae2cfcf40a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate | 2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91a7a559b291767d109048499424946e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5350d8c9240c2278c44ac6f573080f4 |
| publicationDate | 2015-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015122482-A |
| titleOfInvention | Group III nitride semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor device having a group III nitride semiconductor layer having a high In concentration and suitable for mass production, and a manufacturing method thereof. A HEMT 100 includes a substrate 110, a buffer layer 120, a channel layer 130, a barrier layer 140, a gate electrode G1, a source electrode S1, and a drain electrode D1. The channel layer 130 is disposed at a position between the substrate 110 and the barrier layer 140. A gate electrode G1, a source electrode S1, and a drain electrode D1 are disposed at a position opposite to the channel layer 130 when viewed from the barrier layer 140. The channel layer 130 is an AlYInXGa (1-X-Y) N layer. The In concentration X of the channel layer 130 is 0.3≰X≰1.0, and the Al concentration Y of the channel layer 130 is 0≰Y≰0.05. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017045856-A |
| priorityDate | 2013-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.