http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015115404-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N15-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-04 |
| filingDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e59af6fe1116468da882db5c323b2847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33262538fb63b882ef6707ac7fa573c1 |
| publicationDate | 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015115404-A |
| titleOfInvention | Defect concentration evaluation method for silicon single crystal substrate |
| abstract | The present invention provides a method capable of simply evaluating the concentration of VV defects generated in a silicon single crystal substrate by particle beam irradiation. A method for evaluating a defect concentration generated in a silicon single crystal substrate by irradiation with a particle beam, wherein after the resistivity of the silicon single crystal substrate is measured, the particle beam is applied to the silicon single crystal substrate. Irradiation, and after the irradiation, the resistivity of the silicon single crystal substrate is measured again, and the carrier concentration in the silicon single crystal substrate before and after the irradiation is obtained from the measurement result of the resistivity before and after the irradiation of the particle beam. The concentration change rate is calculated, and from the change rate of the carrier concentration, the concentration of VV defects formed by the irradiation of the particle beam in the silicon single crystal substrate and evaluating the VV defect composed of silicon atomic vacancies is evaluated. Defect density evaluation method. [Selection] Figure 1 |
| priorityDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.