| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate |
2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a52c78287772e6465bdc60e7a992b33 |
| publicationDate |
2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015113357-A |
| titleOfInvention |
Polishing composition and polishing method |
| abstract |
In a semiconductor device manufacturing process, silicon nitride or silicon oxynitride is polished and planarized at a high polishing rate and a suitable polishing rate ratio. The alkanolamine compound is a primary or secondary alkanolamine compound, comprising cerium oxide particles and at least one nitride film polishing accelerator selected from the group consisting of a metonium compound and an alkanolamine compound. The average secondary particle diameter of the cerium oxide particles is from 50 nm to 160 nm, the concentration of the metonium compound is from 0.025 mass% to 1.0 mass%, and the pH is from 3.5 to less than 6. And a polishing method using the same. [Selection] Figure 1 |
| priorityDate |
2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |