| abstract |
A gas processing apparatus having an excellent processing capacity is provided. A processing chamber 24 includes a first processing unit 24a, a second processing unit 24b, and a third processing unit 24c. The second processing unit 24b is located closer to the discharge port 23 than the first processing unit 24a. The third processing unit 24c is located closer to the discharge port 23 than the second processing unit 24b. In the first processing unit 24a, at least one inorganic compound selected from metal oxides, metal hydroxides, and metal carbonates is disposed. The second processing unit 24b is provided with at least one inorganic compound selected from metal oxides, metal hydroxides, and metal carbonates, and a reducing agent having a sulfur atom. The third processing unit 24c is provided with at least one of an adsorbent that adsorbs sulfur oxide and a reactant that reacts with sulfur oxide. [Selection] Figure 1 |