| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2015-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1bb34dac01fe786ce9ad2399c77187b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65552ddf2040871861d1bed3f74bbd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9587431209c7f56f7de2760369a3e149 |
| publicationDate |
2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015111723-A |
| titleOfInvention |
Semiconductor device |
| abstract |
It is an object to reduce the number of manufacturing steps of a semiconductor device, to improve the yield of the semiconductor device, and to reduce the manufacturing cost of the semiconductor device. A first transistor having a single crystal semiconductor layer in a channel formation region over a substrate and a second transistor separated from the first transistor through an insulating layer and having an oxide semiconductor layer in the channel formation region And a semiconductor device including a diode including the single crystal semiconductor layer and the oxide semiconductor layer, and a manufacturing method thereof. [Selection] Figure 6 |
| priorityDate |
2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |