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publicationDate 2015-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015103958-A
titleOfInvention Imaging device
abstract In order to ensure the dynamic range of a CMOS image sensor, charges overflowing from a floating diffusion are stored in a storage capacitor element. When the storage capacitor element is formed of a MOS capacitor, the pixel area increases. An imaging apparatus includes a plurality of pixel circuits (PC1) arranged in a row direction and a column direction, and a plurality of storage capacitor wirings (SCL (x)) extending in the column direction and arranged in the row direction. The storage capacitor wiring is connected to a plurality of pixel circuits in the same column, and the pixel circuit stores a first photoelectric conversion element (PD1) that accumulates charges generated by receiving light, and a first photoelectric conversion element Includes a floating diffusion (CFD) to which the charge accumulated in the transistor is transferred, and a first switch transistor (MTX1) for connecting the floating diffusion and the storage capacitor wiring. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109801932-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11405568-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109863743-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021036589-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017103726-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018085709-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7238875-B2
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Total number of triples: 30.