| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60659b663ce442133252cfb65b81170d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b797e4b9d4f4cb800d085e2be5e86a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aace32eeef2fb057fc0ece68754c1ca |
| publicationDate |
2015-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015103555-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A performance degradation of a semiconductor device is suppressed. When the width of the active region ACT1 in which the field effect transistor Q1 is formed is smaller than the width of the active region ACT2 in which the field effect transistor Q2 is formed, the raised source layer EP (S1) of the field effect transistor Q1 Is higher than the height of the surface of the raised source layer EP (S2) of the field effect transistor Q2. The height of the surface of the raised drain layer EP (D1) of the field effect transistor Q1 is higher than the height of the surface of the raised drain layer EP (D2) of the field effect transistor Q2. [Selection] Figure 6 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10366914-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102327360-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026481-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180077003-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10438663-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018142575-A |
| priorityDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |