| abstract |
A semiconductor light emitting device with a low optical loss, comprising a non-epitaxial cladding layer that also functions as an upper contact layer. A semiconductor light emitting device (20A) of the present invention includes a substrate (22), a crystalline semiconductor clad layer (26) formed on the substrate, and a confined heterostructure formed on the crystalline semiconductor clad layer. (30A), an active region (28) formed in the confinement heterostructure, and a non-epitaxial cladding layer (32) formed on the confinement heterostructure and having an electrical resistivity lower than 1 Ω-cm, The conductive semiconductor cladding layer, the confinement heterostructure and the non-epitaxial cladding layer together form a waveguide that guides light in the plane of these cladding layers. [Selection] Figure 2A |