| abstract |
An object of the present invention is to provide a bonding material and a bonding structure which do not have a long bonding process time and have high heat resistance after bonding. A bonding material according to the present invention is composed of an Sn—Bi alloy and Se, excluding inevitable impurities, and is heated and cooled to mainly contain a first metal composed of an Sn—Se compound and Bi. A joint portion made of a second metal as a component is formed. The bonded structure of the present invention is formed of the first conductor, the second conductor, and the bonding material, and the first surface of the first conductor and the second surface of the second conductor. The bonding portion is made of a first metal made of a Sn—Se compound and a second metal containing Bi as a main component. [Selection] Figure 1 |