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filingDate 2014-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
publicationDate 2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015092556-A
titleOfInvention Semiconductor device
abstract In a semiconductor device using an oxide semiconductor film, defects in the oxide semiconductor film are reduced. In addition, electrical characteristics are improved in a semiconductor device including an oxide semiconductor film. In addition, reliability of a semiconductor device using an oxide semiconductor film is improved. An oxide semiconductor layer, and a pair of electrodes in contact with the oxide semiconductor layer and containing copper, aluminum, gold, or silver, the oxide semiconductor layer including a first oxide semiconductor layer, A second oxide semiconductor layer having a stacked structure of a second oxide semiconductor layer and a third oxide semiconductor layer located between the first oxide semiconductor layer and the second oxide semiconductor layer; The semiconductor layer has a plurality of crystal parts, the plurality of crystal parts have c-axis orientation, and the c-axis faces a direction parallel to the normal vector of the upper surface of the second oxide semiconductor layer. A semiconductor device is provided. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022008342-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017051361-A
priorityDate 2013-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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