| abstract |
A semiconductor buffer structure, a semiconductor element including the semiconductor buffer structure, and a method of manufacturing a semiconductor element using the semiconductor buffer structure are provided. A silicon substrate; nucleation layer formed on the silicon substrate; and has been formed on the nucleation layer, the composition ratio is constant B x Al y In z Ga 1 -x-y-z A first layer made of N (0 ≦ x <1, 0 <y <1, 0 ≦ z <1, 0 ≦ x + y + z <1) and formed on the first layer from the same material as the nucleation layer A buffer layer including a second layer and a third layer having the same material and composition ratio as the first layer on the second layer. [Selection] Figure 1 |