| abstract |
A transistor with excellent electrical characteristics (eg, on-current, field-effect mobility, frequency characteristics, etc.) is provided. A transistor includes an oxide semiconductor layer having a channel formation region, first and second gate electrodes, a source electrode, and a drain electrode. The first and second gate electrodes are provided with an oxide semiconductor layer interposed therebetween. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode, and has a region surrounded by the first and second gate electrodes without sandwiching the source electrode and the drain electrode. [Selection] Figure 1 |