| abstract |
There is provided a stripping solution capable of stripping both a resist film on a copper film and a resist film that has been altered by exposure to plasma on an insulating film with a single composition. A resist stripping solution comprising a tertiary alkanolamine, a polar solvent, water, a strong alkali agent, and a reducing agent and having a pH of 12 or more has been altered by exposure to plasma. The resist film can be peeled off, and the copper film and the underlying molybdenum layer are not corroded. TMAH is preferably used as the strong alkali agent, and tannic acid is preferably used as the reducing agent. [Selection figure] None |