| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K2207-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K2201-067 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K1-067 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C3-00 |
| filingDate |
2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92e3a924d5e4a009f69c97299d441b85 |
| publicationDate |
2015-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015064337-A |
| titleOfInvention |
Manufacturing method of fine structure |
| abstract |
PROBLEM TO BE SOLVED: To provide a fine structure manufacturing method capable of manufacturing a fine structure having a transmissive portion having a higher X-ray transmittance than a conventional transmissive portion. A fine structure manufacturing method includes first to fourth steps. In the first step, the support layer 7 is formed so that the metal structure 4 is in contact with the metal structure 4 exposed on the first surface of the recess 3 formed on the first surface of the silicon substrate 1. In the second step, the silicon substrate 1 is selectively etched to expose at least the surface of the metal structure 4 that faces the contact area with the support layer from the silicon substrate, and the metal structure and the support layer 7. To obtain a structure comprising: In the third step, the support layer of the structure is selectively etched. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017002328-A |
| priorityDate |
2013-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |