http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015060937-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fc8bbba7dbfdc1fe42f350fc84e17a3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10128 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10106 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc3c146221d17f2e5d9eb3c1aae7e305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a9150bf6fae9d0f93983e6dd7eeda04 |
| publicationDate | 2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015060937-A |
| titleOfInvention | Metal oxide etchant composition and etching method |
| abstract | Etching solution composition for etching oxide semiconductor of electronic device such as semiconductor element and flat panel display (FPD), metal oxide containing In and metal oxide containing Zn and In used as transparent electrode To provide an etching solution composition that can be controlled at a practical etching rate, has a high solubility of Zn, and has a small composition variation during use, so that a long solution life can be realized. An oxide semiconductor of an electronic device such as a semiconductor element or FPD, a metal oxide containing In used as a transparent electrode, and a metal oxide containing Zn and In can be finely processed. excluding such an acid dissociation constant pKa n of 25 ° C. in any of its dissociation stage, and at least one water base acid is 2.15 or less, the etching solution pH at 25 ° C. is 4 or less An etching method using the composition and the etching solution composition. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017112369-A |
| priorityDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 120.