http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015056459-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7f5b3e078329892426a83bae345c881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_429b44bc1eaf4f40992c9a144121eb4c |
| publicationDate | 2015-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015056459-A |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device having an excellent degree of integration is provided. An end surface of a gate electrode provided so as to cross over a semiconductor layer from one end surface to the other end surface of the semiconductor layer is provided so as to coincide with or be on the end surface of the semiconductor layer. . The semiconductor layer included in the semiconductor device is a semiconductor layer including an oxide semiconductor. In this configuration, the adjacent gate electrodes can be spaced apart by at least the minimum processing size. In addition, in the semiconductor layer including an oxide semiconductor, a high-resistance region can be formed without overlapping the gate electrode in a region that does not overlap with the gate electrode, so that unnecessary conduction of the semiconductor device can be suppressed. . [Selection] Figure 1 |
| priorityDate | 2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.