http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015053482-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8547b5de250b0505a4158fc1b9523776 |
| publicationDate | 2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015053482-A |
| titleOfInvention | Group III nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
| abstract | A group III nitride semiconductor substrate, an epitaxial substrate, and a semiconductor device capable of improving the emission intensity of a semiconductor device are provided. In a semiconductor device 100, a surface 10a has a specific plane orientation, and S is 30 × 10 10 pieces / cm 2 to 2000 × 10 10 pieces / cm 2 of sulfide and O equivalent. Thus, the presence of 2 at% to 20 at% oxide in the surface layer 12 can suppress the pileup of C at the interface between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. Thereby, formation of the high resistance layer at the interface between epitaxial layer 22 and group III nitride semiconductor substrate 10 is suppressed. Therefore, the emission intensity of the semiconductor device 100 can be improved. [Selection] Figure 9 |
| priorityDate | 2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.