| abstract |
In a metal oxide semiconductor field effect transistor (MOSFET) in a device used at the input (s) of rail-to-rail operational amplifiers and other analog and digital circuits such as mixers, ring oscillators, current mirrors, etc. A modular approach to reducing flicker noise is provided. One or more surface channel MOSFETs in the device are selected 1002 and converted 1004 to buried channel MOSFETs. [Selection] Figure 10 |