http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015018940-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0094da32cd0e644233cf1b9942568d03 |
| publicationDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015018940-A |
| titleOfInvention | Semiconductor device |
| abstract | Parasitic capacitance generated between bit lines is reduced and adjacent contacts are prevented from being short-circuited through an air gap. A capacitor is formed in an upper layer than a bit line BT. A capacitor contact CCON2 that connects the capacitor and the substrate is located between adjacent bit lines BT. The adjacent bit lines BT have a first part PT1 that sandwiches the capacitor contact CCON2 between them, and a second part PT2 that does not sandwich the capacitor contact CCON2 between them. An air gap GT is formed in the insulating layer positioned between the second portions PT2, and an air gap GP is formed in a portion of the insulating layer positioned between the first portions PT1 that overlaps the capacitor contact CCON2. Not. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022075278-A1 |
| priorityDate | 2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17979268 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453263778 http://rdf.ncbi.nlm.nih.gov/pubchem/protein/ACCQ00630 |
Total number of triples: 16.