http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015013791-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208
filingDate 2013-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136da8151a38d009aae89e7091642fc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_969664276c0643b24594a89561f30b32
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publicationDate 2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015013791-A
titleOfInvention Periodic table group 13 metal nitride semiconductor crystal manufacturing method and periodic table group 13 metal nitride semiconductor crystal
abstract The present invention provides a method for producing a periodic table group 13 metal nitride semiconductor crystal capable of growing a crystal with good crystal quality and capable of suppressing the occurrence of cracks even when thick film growth is performed. Let it be an issue. In a method for producing a periodic table group 13 metal nitride semiconductor crystal, the method includes a growth step of growing a periodic table group 13 metal nitride semiconductor crystal on a main surface of a seed crystal by a liquid phase growth method. A curvature radius in a cross section perpendicular to the main surface of the seed crystal is set to 10 m or more. [Selection figure] None
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10961619-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017159311-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019218263-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108779580-A
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priorityDate 2013-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009029662-A
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Total number of triples: 31.