| abstract |
A polishing liquid capable of improving flatness after polishing and a method for polishing a substrate using the polishing liquid are provided. A polishing liquid for CMP containing cerium oxide particles, an organic acid A, a polymer compound B, and water, wherein the organic acid A includes a —COOM group, a —Ph—OM group, a —SO 3 M group, and A group having at least one group selected from the group consisting of —PO 3 M 2 groups, the pKa of the organic acid A being less than 9, and the polymer compound B comprising a carboxylic acid group and a carboxylic acid group A polishing liquid comprising at least one selected from at least one selected from the group consisting of a sulfite group and a sulfite group. [Selection figure] None |