| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ccbe6de3d15a953fc5268391ef3bbbb1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed0c9097183a10a55b07416b58941381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4db0e97cc12ebbd977f5306893730271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32bfb15813c2496cd7955a7d19c6341b |
| publicationDate |
2015-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015002218-A |
| titleOfInvention |
Surface treatment method for SiC substrate |
| abstract |
Provided is a surface treatment method for an SiC substrate capable of removing a deteriorated layer generated by mechanical polishing of a bulk substrate in a short time and removing macro step bunching generated in an epitaxial layer. The SiC substrate surface treatment method includes one of the following first and second steps. In the first removal step, the altered layer generated by performing mechanical polishing or chemical mechanical polishing on the substrate 70 is removed by heating the substrate 70 under Si vapor pressure. In the second removal step, the macro step bunching generated in the epitaxial layer 71 is removed by heating the substrate 70 under Si vapor pressure. Since the etching rate is variable, the altered layer can be removed in a short time by increasing the etching rate in the first removal step. On the other hand, excessive removal of the epitaxial layer 71 can be prevented by relatively slowing the etching rate of the second removal step. [Selection] Figure 8 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017105697-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018174105-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7008063-B2 |
| priorityDate |
2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |