http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014533000-A

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 2012-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014533000-A
titleOfInvention Low dielectric constant dielectric protective spacer for forming through-substrate via pattern in low dielectric constant wiring layer
abstract A low dielectric constant dielectric protective spacer is provided for forming a through-substrate via (TSV) pattern in a low dielectric constant wiring layer. A method of forming a low dielectric constant dielectric protective spacer includes forming via openings in the low dielectric constant dielectric interconnect layer by etching. A protective layer is deposited in the via opening and on the low dielectric constant dielectric interconnect layer. At least a portion of the protective layer is etched away from the bottom of the via opening and the horizontal plane of the low dielectric constant dielectric interconnect layer. This etching leaves a protective sidewall spacer on the sidewall of the via opening. A through-substrate via is formed by etching in the bottom of the via opening and the semiconductor substrate. Fill the through-substrate via with a conductive material.
priorityDate 2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007029611-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004262767-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004356617-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011119432-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011260297-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005243993-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517

Total number of triples: 26.