http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014522113-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2014-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2014522113-A |
titleOfInvention | Electroluminescent organic double gate transistor |
abstract | The present invention includes a first dielectric layer (11) and a second dielectric layer (12), a first control electrode (14) and a second control electrode (13), a source electrode (15), The invention relates to an organic electroluminescent transistor (1) comprising a drain electrode (16) and an assembly comprising an ambipolar channel. The bipolar channel includes a first layer of semiconductor material (17), a second layer of semiconductor material (18), the first layer of semiconductor material (17) and the second layer of semiconductor material (18). And a layer (19) of luminescent material disposed between. Both the source electrode (15) and the drain electrode (16) are in contact with only one of the two layers (17, 18) of semiconductor material. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016143639-A |
priorityDate | 2011-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.