| abstract |
The present application provides a step of growing graphene on a substrate by providing a reaction gas including a carbon source and heat to react on the substrate to react with the substrate; and a doping solution containing an n-type dopant, or an n-type N-doping the graphene with a vapor containing a dopant; and a method for n-doping graphene, an n-doped graphene produced thereby, and a device comprising the n-doped graphene To do. [Selection] Figure 1 |