| abstract |
Methods and materials useful for the fabrication of semiconductor devices are disclosed. In certain embodiments, a method of processing a polycrystalline aluminum nitride substrate that is thermally matched to additional materials that can be combined therewith is disclosed. For example, the polycrystalline aluminum nitride substrate can be processed to have a CTE that closely matches the coefficient of thermal expansion of the semiconductor material and / or the material that can be used as a growth substrate for the semiconductor material. The present invention also includes devices that incorporate heat treated substrates and semiconductor materials that are grown using the heat treated substrates. This heat treated substrate has the advantage of solving the problems caused by damage resulting from CTE mismatch between component layers and materials in the semiconductor fabrication process. [Selection figure] None |