http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014241372-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33dafb5bbc2ec47ebcb7becbbe60f704 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea2cbace8573ce0dc121fd430ac8637c |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
filingDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c5b74cbd78881bd1d4101ade8c83100 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5bf7fcadd4de35ef13322f446e8ddc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc384b12109632f3878761550408f56b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99ba2f00c41d34dc7f30d15858fa1f41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b4f157b6db2ee09e9a38bd172be4d6e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70ceaa9218a52186a91c88f2ed578698 |
publicationDate | 2014-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2014241372-A |
titleOfInvention | Photoelectric conversion element and manufacturing method thereof |
abstract | PROBLEM TO BE SOLVED: To achieve high photoelectric conversion efficiency with excellent light absorption ability and charge transport ability without reducing current collection efficiency even if the film thickness of the photoelectric conversion layer is increased so that sufficient light can be absorbed. A photoelectric conversion element is provided. SOLUTION: A photoelectric conversion element 10 has a photoelectric conversion layer 4 containing an organic semiconductor between a positive electrode 2 and a negative electrode 5, and either one of a positive electrode 2 and a negative electrode 5 is provided. Is transparent and has a periodic concavo-convex structure, the period of the periodic concavo-convex structure is 200 to 300 nm, the convex part height of the periodic concavo-convex structure is 120 to 220 nm, and the other facing from the convex vertex of the periodic concavo-convex structure The distance to the electrode is 40 to 170 nm. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102250279-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210045743-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021131113-A1 |
priorityDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 105.