http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014237581-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36016a844e8897bbe2f2e1f1d910c314 |
| publicationDate | 2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014237581-A |
| titleOfInvention | Cubic silicon carbide semiconductor substrate |
| abstract | A method for manufacturing a cubic silicon carbide semiconductor substrate capable of forming a high-quality 3C-SiC layer with few crystal defects is provided. A first step of forming a carbide layer on an upper surface of a silicon substrate, a second step of lowering the temperature of the silicon substrate to a temperature in a second temperature range, and a temperature of the silicon substrate. When the temperature reaches a temperature in the second temperature range, silicon source gas is introduced, and silicon is epitaxially grown in the holes 11h formed at the interface between the silicon substrate 11 and the carbonized layer 12 to fill the holes 11h. The third step, the fourth step of stopping the introduction of the silicon source gas and increasing the temperature of the silicon substrate 11 to the temperature in the third temperature range while introducing the carbon source gas, and the temperature of the silicon substrate 11 is the third level. A silicon source gas and a carbon source gas are introduced, and a cubic silicon carbide epitaxial film 13 is grown on the carbide layer 12, Having. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023058355-A1 |
| priorityDate | 2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.