http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014234336-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bfdf49224a405be1f7b653c56ebad94 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-06 |
filingDate | 2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d901ef23866a83cfea947fb91ae6cb0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b446838fba4f7fa0cc69f00cb81ba93 |
publicationDate | 2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2014234336-A |
titleOfInvention | Polycrystalline gallium nitride powder, molded product and method for producing the same |
abstract | Disclosed are a polycrystalline gallium nitride powder having a low oxygen content and a method for producing the polycrystalline gallium nitride powder, which can be easily molded and can provide a molded body and a sintered body with high density. The polycrystalline gallium nitride powder is characterized in that the aspect ratio of the major axis and the minor axis of the particles is 4 times or less, and the production method thereof includes a reduction step of reducing Ga2O3 to produce Ga2O, and Ga2O And a nitriding step for reacting the nitrogen-containing gas at a temperature lower than that of the reducing step. A polycrystalline gallium nitride powder having an oxygen content of 5 atm% and a bulk density of 1 g / cm 3 or more. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019001681-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018230663-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018042705-A1 |
priorityDate | 2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.