| abstract |
A semiconductor device having a structure that can be easily manufactured even when miniaturized and capable of suppressing a decrease in electrical characteristics due to miniaturization is provided. An oxide semiconductor layer includes an oxide semiconductor layer, a first conductor provided in contact with the oxide semiconductor layer, and an insulator provided in contact with the first conductor. The first conductor and the insulator are provided with openings, and the oxide semiconductor layer, the first conductor, and the side surfaces of the insulator are connected to each other in the openings. It is set as the structure electrically connected by 2 electrically conductive materials by the side contact. [Selection] Figure 1 |