http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014232869-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98 |
| publicationDate | 2014-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014232869-A |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device including an oxide semiconductor is provided with favorable electrical characteristics. An object is to provide a highly reliable semiconductor device in which variation in electrical characteristics of a semiconductor device including an oxide semiconductor is suppressed. An island-shaped semiconductor layer on a base insulating layer, a pair of electrodes on the semiconductor layer, a barrier layer in contact with the lower surface of the electrode, a gate electrode on the semiconductor layer, and between the semiconductor layer and the gate electrode And a gate insulating layer. The semiconductor layer includes an oxide semiconductor, the base insulating layer includes silicon oxide or silicon oxynitride, the electrode includes Al, Cr, Cu, Ta, Ti, Mo, or W, and the barrier layer includes an oxide semiconductor. An oxide containing one or more metal elements is included. Furthermore, the electrode and the barrier layer extend outward from the semiconductor layer when viewed from above. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11245039-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017175129-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016174143-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017147445-A |
| priorityDate | 2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.