| abstract |
A transistor including an oxide semiconductor film with reduced oxygen vacancies is provided. Alternatively, a semiconductor device having a high operation speed is provided. Alternatively, a highly reliable semiconductor device is provided. Alternatively, a semiconductor device having a fine structure is provided. An oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the gate electrode, and the oxide semiconductor film, the gate electrode, and the gate insulating film are disposed above And a protective insulating film having a region containing phosphorus or boron. [Selection] Figure 1 |