| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate |
2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff2b5405433308c16bec8c7c5e742c9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef33f279704e2e84f77c047b691d4989
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c35b1be0685328a5cba26e65c9fff352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75ea5f8a196036022aa92cdb730fae20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac590db2420cb769080e824a969fa5dd |
| publicationDate |
2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014229906-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device capable of improving reliability and a manufacturing method thereof are provided. A method of manufacturing a semiconductor device according to the present invention includes a step of forming a material film on a substrate and a step of forming a capping oxide film on a first surface of the material film so as not to oxidize a second surface of the material film. Performing a typical oxidation process and etching the material film through the second surface of the material film to form a material pattern. When etching the material film, the etching rate of the capping oxide film is Smaller than the etching rate of the material film. [Selection] Figure 6 |
| priorityDate |
2013-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |