http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014209644-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b44f76e49b36dd2909eb36bf02900988 |
| publicationDate | 2014-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014209644-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object is to form a single crystal semiconductor layer having a large area over a large insulating substrate. A large-sized insulating substrate is formed by forming a first porous layer and a second porous layer on a side surface of a single crystal semiconductor ingot, and forming a groove and a single crystal semiconductor layer on a part of the second porous layer. A method for forming a single crystal semiconductor layer, in which a single crystal semiconductor ingot is bonded to the interface, a water jet is applied to the interface between the first porous layer and the second porous layer, and the single crystal semiconductor layer is bonded to a large insulating substrate. Alternatively, the crystalline semiconductor ingot is irradiated with hydrogen ions, a hydrogen ion irradiation region is formed in the crystalline semiconductor ingot, and the crystalline semiconductor ingot is rotated on a large insulating substrate while being heated, and the crystallinity starts from the hydrogen ion irradiation region. The present invention relates to a method for forming a crystalline semiconductor layer in which a semiconductor layer is separated and attached to a large insulating substrate. [Selection] Figure 1 |
| priorityDate | 2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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