http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014201493-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25ba42e5f214f100f81e5e2016f045ce
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-10
filingDate 2013-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f7106c938eb5cd5b3baa82e44ca5cfb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d8239a0738e57af715c15a866b16869
publicationDate 2014-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014201493-A
titleOfInvention Manufacturing method of base substrate and manufacturing method of group III nitride semiconductor substrate
abstract An object of the present invention is to provide a method for manufacturing a base substrate capable of improving the productivity of a group III nitride semiconductor substrate and a method for manufacturing a group III nitride semiconductor substrate using the manufacturing method. A method of manufacturing a base substrate includes forming a carbide layer 12 selected from aluminum carbide, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide, and tantalum carbide on a base layer 11. Nitriding the carbide layer, epitaxially growing the group III nitride semiconductor layer 15 on the nitrided carbide layer, the base layer 11, the nitrided carbide layer 12, and the group III nitride semiconductor layer 15 The layered body constituted by heat treatment is performed in a state where the laminate is immersed in a liquid of a group III element, the base material layer 11 is peeled off from the group III nitride semiconductor layer 15, and the III containing the group III nitride semiconductor layer 15 is removed. Obtaining a base substrate of the group nitride semiconductor. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016174069-A
priorityDate 2013-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012072009-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002053397-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61330
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518429
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453010884
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453621816
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166601
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159433
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449134064
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159387
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452908191
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159434
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452894838

Total number of triples: 27.