| abstract |
A semiconductor stacked body having a low electric resistance in the thickness direction, a method for manufacturing the same, and a semiconductor element including the semiconductor stacked body. A Ga 2 O 3 substrate 2 whose main surface is a surface on which oxygen is arranged in a hexagonal lattice, an AlN buffer layer 3 having a predetermined thickness on the Ga 2 O 3 substrate 2, and an AlN buffer layer 3 A semiconductor stacked body 1 including a nitride semiconductor layer 4 is provided. [Selection] Figure 1A |