http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014191176-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54
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filingDate 2013-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ac9431af38c2b001e21476e84724c5c
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publicationDate 2014-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014191176-A
titleOfInvention Photomask blanks, photomask and method for manufacturing the same
abstract An object of the present invention is to reduce the influence of an electromagnetic field (EMF) effect to reduce the value of an EMF bias, to have a high light shielding property against exposure light even when the light shielding layer is thin, and to have excellent pattern processability. Provided are a binary-type photomask blank suitable for a lithography technique with a half pitch of 40 nm or more on a wafer, a photomask, and a manufacturing method thereof. A photomask blank used for ArF excimer laser exposure light and having a light shielding film for forming a mask pattern on a transparent substrate, wherein the light shielding film is reflected on a single light shielding layer or on a light shielding layer. It has a two-layer structure provided with a prevention layer, has an optical density with respect to exposure light of 2.8 or more, a film thickness of 50 nm or less, and is composed of a single metal material film that does not contain a transition metal. Features. [Selection] Figure 5
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110603489-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017161889-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015092281-A
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