Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J125-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J123-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J201-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc858c749c9ec03da2eaecd53626e43b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7f343bafb31fb269cc585c1a8032d58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f4880606cdaf0fd6c05c1635d3be5ac |
publicationDate |
2014-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2014189583-A |
titleOfInvention |
Laminate for temporary bonding for manufacturing semiconductor device and method for manufacturing semiconductor device |
abstract |
When a member to be processed (semiconductor wafer or the like) is subjected to mechanical or chemical treatment, the member to be processed can be temporarily and reliably supported, and the processed member can be used even when a high temperature process is performed. Provision of a laminated body for temporary bonding for manufacturing a semiconductor device and a method for manufacturing a semiconductor device, which can easily release temporary support for a processed member without damaging the substrate. A laminate for temporary bonding for manufacturing a semiconductor device having (A) a release layer and (B) an adhesive layer, wherein the release layer is (a1) constant at 20 ° C./min under a nitrogen stream. A compound which is liquid at 25 ° C., the temperature at which the weight decreases by 5% by mass when measured under the rate of temperature increase is 250 ° C. or more, and (a2) a constant rate temperature increase at 20 ° C./min in a nitrogen stream A laminate for temporary bonding for manufacturing a semiconductor device, comprising a binder having a temperature at which the weight is reduced by 5 mass% when measured under conditions of 250 ° C or more. [Selection] Figure 3 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102004195-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018519655-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170118890-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102021302-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018065953-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170135898-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016152598-A1 |
priorityDate |
2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |