| abstract |
A semiconductor device in which an element having a new function is provided in a wiring layer is provided. A first wiring layer 150 formed on a semiconductor substrate and a semiconductor element 200 are provided. The first wiring layer 150 includes an insulating layer 156 and a first wiring 154 embedded in the surface of the insulating layer 156. The semiconductor element 200 includes a semiconductor layer 220, a gate insulating film 160, and a gate electrode 210. The semiconductor layer 220 is located on the first wiring layer 150. The gate insulating film 160 is located above or below the semiconductor layer 220. The gate electrode 210 is located on the opposite side of the semiconductor layer 220 with the gate insulating film 160 interposed therebetween. [Selection] Figure 1 |