| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0508
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05169 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2013-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ee9d27752add0fb2b3a06d16dd82408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c82cb6e109d469009e8210874756f964 |
| publicationDate |
2014-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014187342-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
Embodiments provide a semiconductor device in which contact through a via hole between a front surface side electrode and a back surface electrode is stabilized and reliability is improved. A semiconductor device according to an embodiment is provided on a semiconductor layer having a first surface and a second surface opposite to the first surface, and on the first surface. And an intermediate layer composed of only a metal having a standard oxidation-reduction potential of 0 (zero) V or higher in an ionization tendency, and an electrode provided on the intermediate layer. A conductive layer covering an inner surface of the via hole provided so as to communicate with the intermediate layer from the second surface, and is electrically connected to the electrode through the intermediate layer exposed on a bottom surface of the via hole; And a conductive layer connected to. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230101901-A |
| priorityDate |
2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |