| abstract |
A semiconductor device having a three-dimensional structure in which reliability is improved by improving the bondability between substrates and suppressing generation of voids, and a method for manufacturing the same. A semiconductor device includes a first substrate including a first electrode and a first insulating film, and a bonding surface that exposes the first electrode and the first insulating film. Including a second electrode 67 and a second insulating film 69 electrically connected to the first electrode 33, and a bonding surface 71 exposing the second electrode 67 and the second insulating film 69, The second substrate 7 provided to be bonded to the first substrate 2 and the insulating thin film 12 sandwiched between the bonding surfaces 41 and 71 of the respective substrates are provided. Further, the sandwiched insulating thin film is broken by crystal grain growth of the first and second electrodes by heat treatment, and manufactured by a method in which the electrodes are brought into contact with each other. [Selection] Figure 2 |