| abstract |
In a red light emitting semiconductor element having a nitride semiconductor layer to which Eu or Pr is added as an active layer, a red light emitting semiconductor element having a light emission intensity improved as compared with a conventional light emitting semiconductor element and a manufacturing method thereof are provided. A method of manufacturing a red light emitting semiconductor device using GaN, InN, AlN, or a mixed crystal of any two or more thereof, and comprising GaN, InN, AlN, or a mixed crystal of any two or more thereof. An active layer in which Eu or Pr is added to replace Ga, In, or Al under a temperature condition of 900 to 1100 ° C. using a metal organic vapor phase epitaxy method as a base material is a p-type layer A method for manufacturing a red light emitting semiconductor element, wherein O is added together with Eu or Pr when a p-type layer and an n-type layer are formed and formed in a series of formation steps between the n-type layer and the n-type layer. [Selection] Figure 1 |