http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014170958-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40ea201bf24bc3481fa9f2d3d0b11306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff0062d5466ce799d9132e3bb6766ca6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25549ccd9d0a164dda63814e98a40975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_814879ad22f081a87b7d041443c25f35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80a6a4cb6bafc7d71cdfa274dbc433b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_003d76870e22f640c3793ed83d125ae7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65500d77f69cff372700790732321576 |
| publicationDate | 2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014170958-A |
| titleOfInvention | Semiconductor optical amplifier, semiconductor laser device assembly, and semiconductor optical amplifier position adjusting method |
| abstract | A semiconductor optical amplifier made of a GaN-based compound semiconductor capable of achieving a higher optical output is provided. A semiconductor optical amplifier includes: (a) a stacked structure in which a first compound semiconductor layer, a third compound semiconductor layer, and a second compound semiconductor layer made of a GaN-based compound semiconductor are sequentially stacked; ) A second electrode 262 formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the stacked structure has a ridge stripe structure, When W out is the width of the ridge stripe structure on the light emitting end face 203 and W in is the width of the ridge stripe structure on the light incident end face 201, W out > W in is satisfied, and the axis AX 1 of the semiconductor optical amplifier is satisfied. A carrier non-injection region 205 is provided in a region inside the laminated structure from the light emitting end surface 201, and the second electrode 262 includes a first portion 262A and a second portion separated by a separation groove 262C. Consists 62B, the second portion 262B of the second electrode is provided on the carrier non-injection region 205. [Selection] Figure 7 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490692-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116316054-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016139708-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016139708-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018033910-A1 |
| priorityDate | 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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