http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014165268-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e0fc105cdaa6fc6208bcc48eadab50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_837c9440d39b1f391f9c20636d97d50e |
| publicationDate | 2014-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014165268-A |
| titleOfInvention | Semiconductor laser device |
| abstract | A semiconductor laser device having higher light extraction efficiency than that of the prior art is realized. A semiconductor laser device 1 includes a semiconductor substrate 7, a laser part 2 formed in an upper layer of the semiconductor substrate 7, and a carrier from the semiconductor substrate 7 formed in an upper layer of the semiconductor substrate 7 outside the laser part 2. The first contact layer 11 having a high concentration, the optical pumping unit 20 formed in the upper layer of the first contact layer 11, and the first electrode formed in the upper layer of the first contact layer 11 outside the optical pumping unit 20 9, a second contact layer 10 having a carrier concentration higher than that of the semiconductor substrate 7 and formed on the optical pumping unit 20, and a second electrode 8 formed on the second contact layer 10. [Selection] Figure 1 |
| priorityDate | 2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 |
Total number of triples: 13.