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publicationDate 2014-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014157989-A
titleOfInvention Semiconductor light emitting device and manufacturing method thereof
abstract Embodiments provide a semiconductor light emitting device capable of obtaining appropriate chromaticity and a method of manufacturing the same. According to an embodiment, a semiconductor layer has a first surface and a second surface opposite to the first surface, and has a light emitting layer. The p-side electrode and the n-side electrode are provided in the semiconductor layer on the second surface side. The phosphor layer is provided on the first surface side and includes a plurality of phosphors and a first binding material in which the plurality of phosphors are integrated. The scattering layer is provided on the phosphor layer, and includes a scattering material that scatters the emitted light of the light emitting layer, and a second binding material in which a plurality of scattering materials are integrated. [Selection] Figure 1
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