| abstract |
A thin film forming method and apparatus capable of forming various thin films on an object to be processed using atmospheric pressure inductively coupled plasma. Plasma gas is introduced into a plasma generation space, atmospheric pressure inductively coupled plasma is generated by plasma generation means, and mist of a solution containing a reaction material is generated by mist generation means. The mist is introduced into the plasma generation space together with the mist transfer gas 32, and the high frequency power applied to the plasma generation means is controlled to control the oxidizing atmosphere or reducing atmosphere in the atmospheric pressure inductively coupled plasma, and at least the reactive material. A thin film containing some components is formed on the workpiece 8. [Selection] Figure 1 |